PART |
Description |
Maker |
23A1024-E/ST/P 23A1024-15 23A1024T-E/ST/P 23A1024- |
1Mbit SPI Serial SRAM with SDI and SQI Interface
|
Microchip Technology
|
23LCV512 |
512 Kbit SPI Serial SRAM with Battery Backup and SDI Interface
|
Microchip Technology
|
M68AW127B M68AW127BL70MC1T M68AW127BL70MC6T M68AW1 |
1Mbit 128K x8 / 3.0V Asynchronous SRAM CAC 6C 6#16S SKT PLUG 1Mbit 128K x8, 3.0V Asynchronous SRAM 1Mbit28K的8.0V异步SRAM
|
ST Microelectronics 意法半导 STMicroelectronics N.V.
|
AT45DB021A-JI AT45DB021A-JC AT45DB021A-TI AT45DB02 |
SPI Serial EEPROM 2M bit. 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers. For new designs please use AT45DB021B. 200万位2.7伏,只有串行接口闪存64字节的SRAM缓冲器。对于新的设计请使用AT45DB021B
|
Atmel, Corp.
|
M41ST95YMX6TR M41ST95W M41ST95WMH6 M41ST95WMH6E M4 |
MMJ IN-LINE COUPLER F/F CROSSP 5.0.0V12位(64位8)串行时钟(SPI)的静态存储器和NVRAM MOD CONN, RJ-11, 4 WIRE CLUSTER BAR, RJ-11 W/ (8) 6-WI 5.0 or 3.0V, 512 bit (64 bit X 8) Serial RTC (SPI) SRAM and NVRAM Supervisor
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
23A256-E/SN/ST |
256K SPI Bus Low-Power Serial SRAM
|
Microchip Technology
|
23K256 |
256K SPI Bus Low-Power Serial SRAM
|
Microchip Technology
|
23A256T-I_P 23A256T-I_SN 23A256T-I_ST 23A256-I_P 2 |
256K SPI Bus Low-Power Serial SRAM
|
Microchip Technology
|
W25Q32BV W25Q32BVSSAG W25Q32BVDAAP W25Q32BVZPAP W2 |
3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI 32M X 1 SPI BUS SERIAL EEPROM, PDSO16
|
WINBOND ELECTRONICS CORP
|
IS25C02 IS25C02-2GI IS25C02-2GLI IS25C02-2PI IS25C |
2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM 512 X 8 SPI BUS SERIAL EEPROM, PDSO8
|
Integrated Silicon Solution, Inc. 天津新技术产业园区管理委员会 ISSI[Integrated Silicon Solution, Inc]
|